[Introduction] Diodes Incorporated launched the latest product in the silicon carbide (SiC) series: DMWS120H100SM4 N-channel silicon carbide MOSFET. The device addresses applications such as industrial motor drives, solar inverters, data center and telecom power supplies, direct current to direct current (DC-DC) converters, and electric vehicle (EV) battery chargers, where higher efficiency and higher power density requirements.

Diodes Incorporated (Diodes) (Nasdaq: DIOD ) introduces the latest addition to its silicon carbide (SiC) family: the DMWS120H100SM4 N-channel SiC MOSFET. The device addresses applications such as industrial motor drives, solar inverters, data center and telecom power supplies, direct current to direct current (DC-DC) converters, and electric vehicle (EV) battery chargers, where higher efficiency and higher power density requirements.

The DMWS120H100SM4 operates at high voltage (1200V) and sink current (up to 37A) while maintaining low thermal conductivity (RθJC = 0.6°C/W), making it ideal for applications operating in harsh environments. The MOSFET's low RDS(ON) (typ) of only 80mΩ (for 15V gate drive) minimizes conduction losses and improves efficiency. The device's gate charge of only 52nC reduces switching losses and lowers package temperature.

This product is the first SiC MOSFET on the market in a TO247-4 package. An additional Kelvin sense pin can be connected to the source of the MOSFET to optimize switching performance and achieve higher power density.